1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz

The HMC457QS16G HMC457QS16GE is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power Amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the Amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the Amplifier output IP3 CAN be optimized to +45 dBm. The power control (Vpd) CAN be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G HMC457QS16GE ideal power Amplifier for Cellular/3G base station & repeater applications.
By Hittite Microwave Corporation
HMC457QS16G 's PackagesHMC457QS16G 's pdf datasheet
HMC457QS16GE




HMC457QS16G Pinout, Pinouts
HMC457QS16G pinout,Pin out
This is one package pinout of HMC457QS16G,If you need more pinouts please download HMC457QS16G's pdf datasheet.

HMC457QS16G Application circuits
HMC457QS16G circuits
This is one application circuit of HMC457QS16G,If you need more circuits,please download HMC457QS16G's pdf datasheet.


Related Electronics Part Number

Related Keywords:

HMC457QS16G Pb-Free HMC457QS16G Cross Reference HMC457QS16G Schematic HMC457QS16G Distributor
HMC457QS16G Application Notes HMC457QS16G RoHS HMC457QS16G Circuits HMC457QS16G footprint