Wideband Power Amplifier Chip, 2- 20 GHzThe HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The Amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver Amplifier applications. The HMC464 Amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
By Hittite Microwave Corporation |
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| HMC464 Pb-Free | HMC464 Cross Reference | HMC464 Schematic | HMC464 Distributor |
| HMC464 Application Notes | HMC464 RoHS | HMC464 Circuits | HMC464 footprint |
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