19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs HUF75309D3S These N-Channel Power MOSFETs are manufactured using the innovative UltraFET
  • process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products. Formerly developmental type TA75309. By Fairchild Semiconductor
  • HUF75309D3S 's PackagesHUF75309D3S 's pdf datasheet
    HUF75309D3ST TO-252

    HUF75309D3S Pinout, Pinouts
    HUF75309D3S pinout,Pin out
    This is one package pinout of HUF75309D3S,If you need more pinouts please download HUF75309D3S's pdf datasheet.

    HUF75309D3S Application circuits
    HUF75309D3S circuits
    This is one application circuit of HUF75309D3S,If you need more circuits,please download HUF75309D3S's pdf datasheet.

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