20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETsThese N-Channel Power MOSFETs HUF75329D3 HUF75329D3S
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
Diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as Switching Regulators
switching converters, Motor Drivers Relay Drivers low-
voltage Bus Switches and Power Management in portable
and battery-operated products. By Fairchild Semiconductor
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HUF75329D3 Pb-Free | HUF75329D3 Cross Reference | HUF75329D3 Schematic | HUF75329D3 Distributor |
HUF75329D3 Application Notes | HUF75329D3 RoHS | HUF75329D3 Circuits | HUF75329D3 footprint |