49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel Power MOSFETs HUF75329G3 HUF75329P3 HUF75329S3S are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products. By Fairchild Semiconductor
HUF75329G3 's PackagesHUF75329G3 's pdf datasheet
HUF75329S3S TO-263




HUF75329G3 Pinout, Pinouts
HUF75329G3 pinout,Pin out
This is one package pinout of HUF75329G3,If you need more pinouts please download HUF75329G3's pdf datasheet.

HUF75329G3 Application circuits
HUF75329G3 circuits
This is one application circuit of HUF75329G3,If you need more circuits,please download HUF75329G3's pdf datasheet.


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