66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
These N-Channel Power MOSFETs HUF75333P3 are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching convertors, Motor Drivers Relay Drivers lowvoltage Bus Switches and Power Management in portable and battery-operated products.
Formerly developmental type TA75333.
By Fairchild Semiconductor
|HUF75333P3 Pb-Free||HUF75333P3 Cross Reference||HUF75333P3 Schematic||HUF75333P3 Distributor|
|HUF75333P3 Application Notes||HUF75333P3 RoHS||HUF75333P3 Circuits||HUF75333P3 footprint|