66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETsThese N-Channel Power MOSFETs HUF75333P3
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
Diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as Switching Regulators
switching convertors, Motor Drivers Relay Drivers lowvoltage
Bus Switches and Power Management in portable
and battery-operated products.
Formerly developmental type TA75333. By Fairchild Semiconductor |
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| HUF75333P3 Pb-Free | HUF75333P3 Cross Reference | HUF75333P3 Schematic | HUF75333P3 Distributor |
| HUF75333P3 Application Notes | HUF75333P3 RoHS | HUF75333P3 Circuits | HUF75333P3 footprint |
