75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETsThese N-Channel Power MOSFETs HUF75339G3
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
Diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as Switching Regulators
switching converters, Motor Drivers Relay Drivers lowvoltage
Bus Switches and Power Management in portable
and battery-operated products.
Formerly developmental type TA75339. By Fairchild Semiconductor |
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| HUF75339G3 Pb-Free | HUF75339G3 Cross Reference | HUF75339G3 Schematic | HUF75339G3 Distributor |
| HUF75339G3 Application Notes | HUF75339G3 RoHS | HUF75339G3 Circuits | HUF75339G3 footprint |
