75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel Power MOSFETs HUF75339G3 are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers lowvoltage Bus Switches and Power Management in portable and battery-operated products.
Formerly developmental type TA75339.
By Fairchild Semiconductor
HUF75339G3 's PackagesHUF75339G3 's pdf datasheet

HUF75339G3 Pinout, Pinouts
HUF75339G3 pinout,Pin out
This is one package pinout of HUF75339G3,If you need more pinouts please download HUF75339G3's pdf datasheet.

HUF75339G3 Application circuits
HUF75339G3 circuits
This is one application circuit of HUF75339G3,If you need more circuits,please download HUF75339G3's pdf datasheet.

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