56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel Power MOSFETs HUF75639S3R4851 is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low-voltage Bus Switches and power management in portable and battery-operated products. By Fairchild Semiconductor
HUF75639S3R4851 's PackagesHUF75639S3R4851 's pdf datasheet



HUF75639S3R4851 Pinout, Pinouts
HUF75639S3R4851 pinout,Pin out
This is one package pinout of HUF75639S3R4851,If you need more pinouts please download HUF75639S3R4851's pdf datasheet.

HUF75639S3R4851 Application circuits
HUF75639S3R4851 circuits
This is one application circuit of HUF75639S3R4851,If you need more circuits,please download HUF75639S3R4851's pdf datasheet.


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