4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

This N-Channel Power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low-voltage bus switches, and Power Management in portable and battery- operated products. By Fairchild Semiconductor
HUF76113T3ST 's PackagesHUF76113T3ST 's pdf datasheet

HUF76113T3ST Pinout, Pinouts
HUF76113T3ST pinout,Pin out
This is one package pinout of HUF76113T3ST,If you need more pinouts please download HUF76113T3ST's pdf datasheet.

HUF76113T3ST Application circuits
HUF76113T3ST circuits
This is one application circuit of HUF76113T3ST,If you need more circuits,please download HUF76113T3ST's pdf datasheet.

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