2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET HUFA75307T3ST Power MOSFET This N-Channel Power MOSFET is manufactured using the innovative UltraFET
  • process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products. Formerly developmental type TA75307. By Fairchild Semiconductor
  • HUFA75307T3ST 's PackagesHUFA75307T3ST 's pdf datasheet

    HUFA75307T3ST Pinout, Pinouts
    HUFA75307T3ST pinout,Pin out
    This is one package pinout of HUFA75307T3ST,If you need more pinouts please download HUFA75307T3ST's pdf datasheet.

    HUFA75307T3ST Application circuits
    HUFA75307T3ST circuits
    This is one application circuit of HUFA75307T3ST,If you need more circuits,please download HUFA75307T3ST's pdf datasheet.

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