2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET HUFA75307T3ST Power MOSFET This N-Channel Power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products. Formerly developmental type TA75307. By Fairchild Semiconductor

HUFA75307T3ST 's Packages HUFA75307T3ST 's pdf datasheet Looking for Electronic Components?

• HUF75307T3ST, 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET PowerMOSFET
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