Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package

These N-Channel Power MOSFETs HUFA75332S3S are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers lowvoltage Bus Switches and Power Management in portable and battery-operated products.
Formerly developmental type TA75332.
By Fairchild Semiconductor
HUFA75332S3S 's PackagesHUFA75332S3S 's pdf datasheet
HUFA75332S3ST TO-263

HUFA75332S3S Pinout, Pinouts
HUFA75332S3S pinout,Pin out
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