56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs HUFA75639G3 These N-Channel Power MOSFETs are manufactured using the innovative UltraFET
  • process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as Switching Regulators switching converters, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products. Formerly developmental type TA75639. By Fairchild Semiconductor
  • HUFA75639G3 's PackagesHUFA75639G3 's pdf datasheet



    HUFA75639G3 Pinout, Pinouts
    HUFA75639G3 pinout,Pin out
    This is one package pinout of HUFA75639G3,If you need more pinouts please download HUFA75639G3's pdf datasheet.

    HUFA75639G3 Application circuits
    HUFA75639G3 circuits
    This is one application circuit of HUFA75639G3,If you need more circuits,please download HUFA75639G3's pdf datasheet.


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