L-Band Avionics Pulsed Power Transistor

The high power HVV1011-300 device is a high voltage silicon enhancement mode RF Transistor designed for L-Band pulsed avionics applications operating over the frequency range at 1030 MHz and 1090 MHz. By HVVi Semiconductors
Part Manufacturer Description Datasheet Samples
LP3991TLX-1.55/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TLX-0.8/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TL-1.55/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TLX-2.5/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TL-2.5/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TL-3.0/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
LP3991TL-1.8/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
TPS62203TDE1 Texas Instruments 3.3-V Output, 300-mA, 95% Efficient Step-Down Converter 0-
TPS62203TDE2 Texas Instruments 3.3-V Output, 300-mA, 95% Efficient Step-Down Converter 0-
LP3991TLX-3.0/NOPB Texas Instruments 300-mA LDO for Digital Applications 4-DSBGA
HVV1011-300 's PackagesHVV1011-300 's pdf datasheet



HVV1011-300 Pinout, Pinouts
HVV1011-300 pinout,Pin out
This is one package pinout of HVV1011-300,If you need more pinouts please download HVV1011-300's pdf datasheet.

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