L-Band Radar Pulsed Power Transistor

The high power HVV1214-25 device is a high voltage silicon enhancement mode RF Transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. By HVVi Semiconductors
HVV1214-025 's PackagesHVV1214-025 's pdf datasheet



HVV1214-025 Pinout, Pinouts
HVV1214-025 pinout,Pin out
This is one package pinout of HVV1214-025,If you need more pinouts please download HVV1214-025's pdf datasheet.

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HVV1214-025 Application Notes HVV1214-025 RoHS HVV1214-025 Circuits HVV1214-025 footprint