512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

The HYNIX HY27US08121A series is a 64Mx8bit with spare 32Mx16 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that CAN be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4096 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected Flash cells. A program operation allows to write the 512-byte page in typical 200us and an erase operation CAN be performed in typical 2ms on a 16Kbyte(X8 device) block. Data in the page mode CAN be read out at 50ns cycle time (60ns : 1.8v device) per byte. The I/O pins serve as the ports for address and data input/output as well as command input. This Interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint. Commands, Data and Addresses are synchronously introduced using CE#, WE#, ALE and CLE input pin. The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The modifying CAN be locked using the WP# input pin or using the extended lock block feature described later. The output pin RB# (open drain buffer) signals the status of the device during each operation. In a system with multiple Memories the RB# pins CAN be connected all together to provide a global status signal. Even the write-intensive systems CAN take advantage of the HY27(U/S)S(08/16)121A extended reliability of 100K program/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
By Hynix Semiconductor
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HY27US08121A Pinout, Pinouts
HY27US08121A pinout,Pin out
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