32 Mbit (2m X 16) Low Voltage Flash Memory Semiconductor

The HY29LV320 is a 32 Mbit, 3 volt-only CMOS Flash memory organized as 2,097,152 (2M) words. The device is available in 48-pin TSOP and 63- ball FBGA packages. Word-wide data (x16) ap- pears on DQ[15:0]. The HY29LV320 CAN be programmed and erased in-system with a single 3 volt VCC supply. Inter- nally generated and regulated voltages are pro- vided for program and erase operations, so that the device does not require a higher voltage VPP power supply to perform those functions. The de- vice CAN also be programmed in standard EPROM programmers. Access times as fast as 70ns over the full operating voltage range of 2.7 - 3.6 volts are offered for Timing compatibility with the zero wait state requirements of high speed micropro- cessors. To eliminate bus contention, the HY29LV320 has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device is compatible with the JEDEC single- power-supply Flash command set standard. Com- mands are written to the command Register using standard Microprocessor write Timings from where they are routed to an internal state-machine that controls the erase and programming circuits. Device programming is performed a word at a time by executing the four-cycle Program Command write sequence. This initiates an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Faster program- ming times are achieved by placing the HY29LV320 in the Unlock Bypass mode, which requires only two write cycles to program data in- stead of four. By Hynix Semiconductor
HY29LV320 's PackagesHY29LV320 's pdf datasheet

HY29LV320 Pinout, Pinouts
HY29LV320 pinout,Pin out
This is one package pinout of HY29LV320,If you need more pinouts please download HY29LV320's pdf datasheet.

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