4banks X 4m X 16bit Synchronous Dram Semiconductor

The HYNIX HY27(U/S)A(08/16)1G1M series is a family of non-volatile Flash Memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. By Hynix Semiconductor
HY57V561620T 's PackagesHY57V561620T 's pdf datasheet
HY57V561620T-HP
HY57V561620T-H
HY57V561620T-8
HY57V561620T-P
HY57V561620T-S
HY57V561620LT-HP
HY57V561620LT-H
HY57V561620LT-8
HY57V561620LT-P
HY57V561620LT-S




HY57V561620T Pinout, Pinouts
HY57V561620T pinout,Pin out
This is one package pinout of HY57V561620T,If you need more pinouts please download HY57V561620T's pdf datasheet.

HY57V561620T circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

HY57V561620T Pb-Free HY57V561620T Cross Reference HY57V561620T Schematic HY57V561620T Distributor
HY57V561620T Application Notes HY57V561620T RoHS HY57V561620T Circuits HY57V561620T footprint
Hot categories