The HY5DU12422B(L)F, HY5DU12822B(L)F and HY5DU121622B(L)F are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM ideally suited for the main memory applications which requires large memory density and high bandwidth. This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the Clock While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter- nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. By Hynix Semiconductor
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HY5DU12422BF Pinout, Pinouts
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