512M(16Mx32) GDDR SDRAM

The Hynix HY5DW113222FM P) is a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM which consistsof two 256Mbit(x32) - Multi-chip-, ideally suited for the point-to-point applications which requires high bandwidth. The Hynix 16Mx32 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the Clock While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatiblewith SSTL_2.
By Hynix Semiconductor
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