Preliminary The HY5TQ1G431ZNFP HY5TQ1G831ZNFP and HY5TQ1G631ZNFP are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the Clock While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. By Zarlink Semiconductor
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