128Mb Synchronous DRAM Based On 2M X 4Bank X16 I/O

The Hynix HY5V26E(L)F(P) series is a 134,217,728bit CMOS Synchronous DRAM ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V26E(L)F(P) series is organized as 4banks of 2,097,152 x 16. HY5V26E(L)F(P) is offering fully synchronous operation referenced to a positive edge of the Clock All inputs andoutputs are synchronized with the rising edge of the Clock input. The data paths are internally pipelined to achievevery high bandwidth. All input and output voltage levels are compatible with LVTTL.
By Hynix Semiconductor
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