512M(16Mx32) GDDR SDRAM

The Hynix Mobile SDR is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellularphones with internet access and Multimedia capabilities, mini-notebook, handheld PCs. The Hynix HY5W6B6DLF P) is a 67,108,864bit CMOS Synchronous Dynamic Random Access Memory. It is organized as4banks of 1,048,576x16. The Mobile SDR provides for programmable options including CAS latency of 1, 2 or 3, READ or WRITE burstlength of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave). And the Mobile SDR also provides for special programmable options including Partial Array Self Refresh of a quarter bank, a half bank,1bank, 2banks, or all banks. The Hynix HY5W6B6DLF P) has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh)to reduce self refresh current consumption. Since an internal Temperature Sensor is implanted, it enables to automati-cally adjust refresh rate according to temperature without external EMRS command. A burst of Read or Write cycles inprogress CAN be terminated by a burst terminate command or CAN be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule).
By Hynix Semiconductor
HY5W6B6DLF 's PackagesHY5W6B6DLF 's pdf datasheet



HY5W6B6DLF Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HY5W6B6DLF circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

HY5W6B6DLF Pb-Free HY5W6B6DLF Cross Reference HY5W6B6DLF Schematic HY5W6B6DLF Distributor
HY5W6B6DLF Application Notes HY5W6B6DLF RoHS HY5W6B6DLF Circuits HY5W6B6DLF footprint
Hot categories