512K X8 Bit 3.3V Low Power CMOS Slow SRAMThe HY62V8400A is a high-speed, low power and
4M bits CMOS SRAM organized as 512K words
by 8 bits. The HY62V8400A uses Hynix's high
performance twin tub CMOS process technology
and was designed for high-speed and low power
circuit technology. It is particularly well suited for
use in high-density and low power system
applications. This device has a data retention
mode that guarantees data to remain valid at the
minimum power supply voltage of 2.0V. By Hynix Semiconductor
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| HY62V8400A Pb-Free | HY62V8400A Cross Reference | HY62V8400A Schematic | HY62V8400A Distributor |
| HY62V8400A Application Notes | HY62V8400A RoHS | HY62V8400A Circuits | HY62V8400A footprint |
