128Mb 1.8 Core Voltage

nfineon Technologies' Mobile-RAM cuts power consumption by up to 80% thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated Power Management features for both pre-tested Known Good Die (KGD) / wafer solution and chips. By Infineon Technologies Corporation
Part Manufacturer Description Datasheet Samples
TMS664164DGE-10 Texas Instruments IC 4M X 16 SYNCHRONOUS DRAM, 7.5 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM
TMS664814DGE-10 Texas Instruments IC 8M X 8 SYNCHRONOUS DRAM, 7.5 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM
HYB18L256160BF-7.5 's PackagesHYB18L256160BF-7.5 's pdf datasheet
HYE18L256160BF-7.5
HYE18L256160BFL-7.5
HYB18L256160BC-7.5




HYB18L256160BF-7.5 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HYB18L256160BF-7.5 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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