256-Mbit Double-Data-Rate-Two SDRAM

The 256-Mbit DDR2 DRAM HYB18TC256800BF is a high-speed Double-Data- Rate-Two CMOS Synchronous DRAM device containing 268,435,456 bits and internally configured as a quad-bank DRAM The 256-Mbit device is organized as 8 Mbit 8 I/O 4 banks or 4 Mbit 16 I/O 4 banks chip. These synchronous devices achieve high speed transfer rates starting at 400 Mb/sec/pin for general applications. See Table 1 for performance figures. By Qimonda
HYB18TC256800BF 's PackagesHYB18TC256800BF 's pdf datasheet
HYB18TC256160BF
HYB18TC256800BF-2.5
HYB18TC256160BF-2.5
HYB18TC256800BF-2.5F
HYB18TC256160BF-2.5F
HYB18TC256800BF-3S
HYB18TC256160BF-3S
HYB18TC256800BF-3
HYB18TC256160BF-3
HYB18TC256800BF-3.7
HYB18TC256160BF-3.7
HYB18TC256800BF-5
HYB18TC256160BF-5




HYB18TC256800BF Pinout, Pinouts
HYB18TC256800BF pinout,Pin out
This is one package pinout of HYB18TC256800BF,If you need more pinouts please download HYB18TC256800BF's pdf datasheet.

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