512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM

The 512-Mbit DDR2 DRAM HYB18TC512800CF is a high-speed Double-Data- Rate-Two CMOS Synchronous DRAM device containing 536, 870, 912 bits and internally configured as a quad-bank DRAM The 512-Mbit device is organized as 16 Mbit 8 I/O 4 banks or 8 Mbit 16 I/O 4 banks chip. These synchronous devices achieve high speed transfer rates starting at 400 Mb/sec/pin for general applications. See Table 1 for performance figures. By Qimonda
HYB18TC512800CF 's PackagesHYB18TC512800CF 's pdf datasheet
HYB18TC512160CF
HYB18TC512160CF-1.9
HYB18TC512800CF-1.9
HYB18TC512160CF-19F
HYB18TC512800CF-19F
HYB18TC512160CF-2.5
HYB18TC512160CF-25F
HYB18TC512800CF-25F
HYB18TC512160CF-3S
HYB18TC512800CF-3S
HYB18TC512160CF-3.7
HYB18TC512800CF-3.7
HYB18TC512160CF-5
HYB18TC512800CF-5
HYB18TC512800CF-2.5




HYB18TC512800CF Pinout, Pinouts
HYB18TC512800CF pinout,Pin out
This is one package pinout of HYB18TC512800CF,If you need more pinouts please download HYB18TC512800CF's pdf datasheet.

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HYB18TC512800CF Application Notes HYB18TC512800CF RoHS HYB18TC512800CF Circuits HYB18TC512800CF footprint
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