512mbit Double Data Rate Sdram - Infineon Technologies Ag

The 512Mbit Double Data Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM The 512Mbit Double Data Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an Interface designed to transfer two data words per Clock cycle at the I/O pins. A single read or write access for the 512Mbit Double Data Rate SDRAM effectively consists of a single 2n-bit wide, one Clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. By Infineon Technologies Corporation
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HYB25D512160AT Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HYB25D512160AT circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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