256 Mbit Synchronous Dram - Infineon Technologies Ag

The HYB39S256400 800/160DT(L) are four bank Synchronous DRAMs organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system Clock The chip is fabricated with INFINEONs advanced 0.14 m 256MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied Clock By Infineon Technologies Corporation