256 MBit Synchronous DRAM

The HYB39S256400/800/160DT(L) are four bank Synchronous DRAMs organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system Clock The chip is fabricated with INFINEONs advanced 0.14 m 256MBit DRAM process technology. By Infineon Technologies Corporation
HYB39S256400DT 's PackagesHYB39S256400DT 's pdf datasheet
HYB39S256400DT-6
HYB39S256400DT-7
HYB39S256400DT-7.5
HYB39S256400DT-8
HYB39S256800DT-6
HYB39S256800DT-7
HYB39S256800DT-7.5
HYB39S256800DT-8
HYB39S256160DT-6
HYB39S256160DT-7
HYB39S256160DT-7.5
HYB39S256160DT-8




HYB39S256400DT Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HYB39S256400DT circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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