256-MBit Synchronous DRAM SDRAM

The HYB39S256[400/800/160]F[E/T/F](L) are four bank Synchronous DRAMs organized as 4 banks x 16 MBit x4, 4 banks x 8 MBit x8 and 4 banks x 4 Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system Clock The chip is fabricated with Qimondas advanced 0.11-m 256-MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied Clock By Qimonda
HYB39S256400FF 's PackagesHYB39S256400FF 's pdf datasheet
HYB39S256407FE-7
HYB39S256400FF-7
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HYB39S256400FFL-7
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HYB39S256800FE-7
HYB39S256800FFL-7
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HYB39S256160FF-7
HYB39S256160FE-7
HYB39S256160FFL-7
HYB39S256160FEL-7
HYB39S256160FF-6
HYB39S256160FE-6
HYB39S256160FFL-6
HYB39S256160FEL-6
HYI39S256800FE-7
HYI39S256160FE-7
HYB39S256400FT-7
HYB39S256400FTL-7
HYB39S256800FT-7
HYB39S256800FTL-7
HYB39S256160FT-7
HYB39S256160FTL-7
HYB39S256160FT-6
HYI39S256800FT-7
HYI39S256160FT-7




HYB39S256400FF Pinout, Pinouts
HYB39S256400FF pinout,Pin out
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