512-Mbit Synchronous DRAM SDRAM

The HY[I/B]39S512[40/80/16]0A[E/T] are four bank Synchronous DRAMs organized as 4 banks 32MBit 4, 4 banks 16MBit 8 and 4 banks 8Mbit 16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system Clock The chip is fabricated with Qimonda advanced 0.14 m 512-MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied Clock By Qimonda
HYB39S512400A 's PackagesHYB39S512400A 's pdf datasheet
HYB39S512400AT-7.5 TSOP
HYB39S512800AT-7.5 TSOP
HYB39S512160AT-7.5 TSOP
HYB39S512400AE-7.5 TSOP
HYB39S512800AE-7.5 TSOP
HYB39S512160AE-7.5 TSOP
HYI39S512400AT-7.5 TSOP
HYI39S512800AT-7.5 TSOP
HYI39S512160AT-7.5 TSOP
HYI39S512400AE-7.5 TSOP
HYI39S512800AE-7.5 TSOP
HYI39S512160AE-7.5 TSOP

HYB39S512400A Pinout, Pinouts
HYB39S512400A pinout,Pin out
This is one package pinout of HYB39S512400A,If you need more pinouts please download HYB39S512400A's pdf datasheet.

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HYB39S512400A Application Notes HYB39S512400A RoHS HYB39S512400A Circuits HYB39S512400A footprint
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