512-mbit Synchronous Dram - Infineon Technologies Ag

The HYB 39S512[40/80/16]0AT(L) are four bank Synchronous DRAMs organized as 4 banks 32MBit 4, 4 banks 16MBit 8 and 4 banks 8Mbit 16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system Clock The chip is fabricated with INFINEONs advanced 0.14 m 512MBit DRAM process technology. By Infineon Technologies Corporation
HYB39S512400AT 's PackagesHYB39S512400AT 's pdf datasheet



HYB39S512400AT Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HYB39S512400AT circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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