Low Power SRAM Performance At DRAM Costs.

CellularRAM is targeted at replacing SRAM in next-generation mobile phones by providing a high capacity, high bandwidth and power efficient memory solution at a very attractive cost/bit ratio. By Infineon Technologies Corporation
Part Manufacturer Description Datasheet Samples
TLC5615IDGKG4 Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-VSSOP -40 to 85
TLC5615CDGKR Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-VSSOP 0 to 70
TLC5615IDGK Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-VSSOP -40 to 85
DS125DF1610FBE/NOPB Texas Instruments 9.8 to 12.5 Gbps 16-Channel Retimer 196-FCBGA -20 to 85
DS125DF1610FB/NOPB Texas Instruments 9.8 to 12.5 Gbps 16-Channel Retimer 196-FCBGA -20 to 85
TLC5615CDGKG4 Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-VSSOP 0 to 70
TLC5615CDGK Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-VSSOP 0 to 70
DS80EP100SD/NOPB Texas Instruments 5 to 12.5 Gbps, Power-Saver Equalizer for Backplanes and Cables 6-WSON -40 to 85
DS80EP100SDX/NOPB Texas Instruments 5 to 12.5 Gbps, Power-Saver Equalizer for Backplanes and Cables 6-WSON -40 to 85
TLC5615IDG4 Texas Instruments 10-Bit, 12.5 us DAC, Serial Input, Low Power 8-SOIC -40 to 85
HYE18P64160AF-12.5 's PackagesHYE18P64160AF-12.5 's pdf datasheet
HYE18P64160AF-9.6
HYE18P64160AW-12.5




HYE18P64160AF-12.5 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
HYE18P64160AF-12.5 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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HYE18P64160AF-12.5 Application Notes HYE18P64160AF-12.5 RoHS HYE18P64160AF-12.5 Circuits HYE18P64160AF-12.5 footprint
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