512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM

The 512-Mbit DDR2 DRAM HYI18TC512800B2F is a high-speed Double-Data- Rate-Two CMOS Synchronous DRAM device containing 536, 870, 912 bits and internally configured as a quad-bank DRAM The 512-Mbit device is organized as 16 Mbit 8 I/O 4 banks or 8 Mbit 16 I/O 4 banks chip. These synchronous devices achieve high speed transfer rates starting at 400 Mb/sec/pin for general applications. See Table 1 for performance figures. By Qimonda
HYI18TC512800B2F 's PackagesHYI18TC512800B2F 's pdf datasheet
HYB18TC512800B2F
HYB18TC512160B2F
HYI18TC512160B2F
HYB18TC512160B2F-2.5
HYB18TC512800B2F-2.5
HYB18TC512160B2F-25F
HYB18TC512800B2F-25F
HYB18TC512160B2F-3S
HYB18TC512800B2F-3S
HYB18TC512160B2F-3.7
HYB18TC512800B2F-3.7
HYB18TC512160B2F-5
HYB18TC512800B2F-5
HYI18TC512800B2F-2.5
HYI18TC512160B2F-2.5
HYI18TC512800B2F-25F
HYI18TC512160B2F-25F
HYI18TC512160B2F-3S
HYI18TC512800B2F-3S
HYI18TC512800B2F-3.7
HYI18TC512160B2F-3.7
HYI18TC512800B2F-5
HYI18TC512160B2F-5




HYI18TC512800B2F Pinout, Pinouts
HYI18TC512800B2F pinout,Pin out
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