66a, 55v, 0.016 Ohm. N-channel Ultrafet Power MosfetsThese N-Channel Power MOSFETs HUF75333G3
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
Diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efciency is important, such as Switching Regulators
switching convertors, Motor Drivers Relay Drivers low-
voltage Bus Switches and Power Management in portable
and battery-operated products By Intersil Corporation
|
|
HUF75333G3 Pb-Free | HUF75333G3 Cross Reference | HUF75333G3 Schematic | HUF75333G3 Distributor |
HUF75333G3 Application Notes | HUF75333G3 RoHS | HUF75333G3 Circuits | HUF75333G3 footprint |