66a, 55v, 0.016 Ohm. N-channel Ultrafet Power Mosfets

These N-Channel Power MOSFETs HUF75333G3 are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efciency is important, such as Switching Regulators switching convertors, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products By Intersil Corporation
HUF75333G3 's PackagesHUF75333G3 's pdf datasheet

HUF75333G3 Pinout, Pinouts
HUF75333G3 pinout,Pin out
This is one package pinout of HUF75333G3,If you need more pinouts please download HUF75333G3's pdf datasheet.

HUF75333G3 Application circuits
HUF75333G3 circuits
This is one application circuit of HUF75333G3,If you need more circuits,please download HUF75333G3's pdf datasheet.

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