66a, 55v, 0.016 Ohm. N-channel Ultrafet Power Mosfets

These N-Channel Power MOSFETs HUF75333G3 are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efciency is important, such as Switching Regulators switching convertors, Motor Drivers Relay Drivers low- voltage Bus Switches and Power Management in portable and battery-operated products By Intersil Corporation