Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. By International Rectifier Corp.
IRF1010Z 's PackagesIRF1010Z 's pdf datasheet

IRF1010Z Pinout, Pinouts
IRF1010Z pinout,Pin out
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