AUTOMOTIVE MOSFET IRF3808S IRF3808L ,Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Power MOSFET utilizes the latest pro- cessing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET Power MOSFET are a 175C junction operating temperature, low RJC, fast switch- ing speed and improved repetitive avalanche rating. This combina- tion makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. By International Rectifier Corp.
IRF3808SPBF 's PackagesIRF3808SPBF 's pdf datasheet

IRF3808SPBF Pinout, Pinouts
IRF3808SPBF pinout,Pin out
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