2.0a, 250v, 2.0 Ohm, N-channel Power Mosfet CorporationThis is an N-Channel enhancement mode silicon Gate power
eld effect Transistor IRF614 . It is an advanced Power MOSFET
designed, tested, and guaranteed to withstand a specied
level of energy in the breakdown avalanche mode of opera-
tion. This Power MOSFET is designed for applications such
as Switching Regulators switching converters, Motor Drivers
Relay Drivers and drivers for high power bipolar switching
Transistors requiring high speed and low Gate drive power.
This type CAN be operated directly from integrated circuits.
Formerly developmental type TA17443. By Intersil Corporation
|
|
IRF614 Pb-Free | IRF614 Cross Reference | IRF614 Schematic | IRF614 Distributor |
IRF614 Application Notes | IRF614 RoHS | IRF614 Circuits | IRF614 footprint |