2.0a, 250v, 2.0 Ohm, N-channel Power Mosfet Corporation

This is an N-Channel enhancement mode silicon Gate power eld effect Transistor IRF614 . It is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of opera- tion. This Power MOSFET is designed for applications such as Switching Regulators switching converters, Motor Drivers Relay Drivers and drivers for high power bipolar switching Transistors requiring high speed and low Gate drive power. This type CAN be operated directly from integrated circuits. Formerly developmental type TA17443. By Intersil Corporation
IRF614 's PackagesIRF614 's pdf datasheet

IRF614 Pinout, Pinouts
IRF614 pinout,Pin out
This is one package pinout of IRF614,If you need more pinouts please download IRF614's pdf datasheet.

IRF614 Application circuits
IRF614 circuits
This is one application circuit of IRF614,If you need more circuits,please download IRF614's pdf datasheet.

Related Electronics Part Number

Related Keywords:

IRF614 Pb-Free IRF614 Cross Reference IRF614 Schematic IRF614 Distributor
IRF614 Application Notes IRF614 RoHS IRF614 Circuits IRF614 footprint