2.0a, 250v, 2.0 Ohm, N-channel Power Mosfet Corporation

This is an N-Channel enhancement mode silicon Gate power eld effect Transistor IRF614 . It is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of opera- tion. This Power MOSFET is designed for applications such as Switching Regulators switching converters, Motor Drivers Relay Drivers and drivers for high power bipolar switching Transistors requiring high speed and low Gate drive power. This type CAN be operated directly from integrated circuits. Formerly developmental type TA17443. By Intersil Corporation