Power Mosfet(vdss=200v, Rds(on)=0.30ohm, Id=9.3a) - International Rectifier

Fifth Generation HEXFET Power MOSFETs IRF630N IRF630NS IRF630NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. By International Rectifier Corp.
IRF630NL 's PackagesIRF630NL 's pdf datasheet

IRF630NL Pinout, Pinouts
IRF630NL pinout,Pin out
This is one package pinout of IRF630NL,If you need more pinouts please download IRF630NL's pdf datasheet.

IRF630NL Application circuits
IRF630NL circuits
This is one application circuit of IRF630NL,If you need more circuits,please download IRF630NL's pdf datasheet.

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