A 20V N-channel HEXFET Power MOSFET With 20 Volt Gate In The DirectFET MT Package Rated At 150 Amperes Optimized With Low On Resistance For Applications Such As Active OR�ing. Shipped In Tape And Reel Only. Part Is Not Available In Bulk, TR Is Imp

The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC Converters that power the latest generation of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), Gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu- larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. By International Rectifier Corp.
IRF6609 's PackagesIRF6609 's pdf datasheet
IRF6609TR1
IRF6609TR1PBF
IRF6609TRPBF




IRF6609 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IRF6609 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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