A 30V N-channel HEXFET Power MOSFET With 20 Volt Gate In The DirectFET MT Package Rated At 150 Amperes Optimized With Low On Resistance For Applications Such As Active OR�ing. Shipped In Tape And Reel Only. Part Is Not Available In Bulk, TR Is Imp

The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC Converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), Gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/ dt immunity for synchronous FET applications. By International Rectifier Corp.
IRF6618 's PackagesIRF6618 's pdf datasheet
IRF6618TR1
IRF6618TR1PBF
IRF6618TRPBF




IRF6618 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IRF6618 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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