A 20V Single N-Channel HEXFET Power MOSFET In A DirectFET MX Package�rated At 150 Amperes Optimized With Low On Resistance For Applications Such As Active OR�ing. Shipped In Tape And Reel Only. Part Is Not Available In Bulk, TR Is Implied In Par

The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC Converters that power the latest generation of processors operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), Gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. By International Rectifier Corp.