A 30V Single N-Channel HEXFET Power MOSFET In A DirectFET SQ Package�rated At 55 Amperes Optimized With Low On Resistance For Applications Such As Active OR�ing. Shipped In Tape And Reel Only. Part Is Not Available In Bulk, TR Is Implied In Part

The IRF6621 combines the latest HEXFET, Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC Converters that power the latest generation of processors operating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) AND Gate charge to minimize losses in the control FET socket. By International Rectifier Corp.
IRF6621 's PackagesIRF6621 's pdf datasheet

IRF6621 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IRF6621 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

IRF6621 Pb-Free IRF6621 Cross Reference IRF6621 Schematic IRF6621 Distributor
IRF6621 Application Notes IRF6621 RoHS IRF6621 Circuits IRF6621 footprint