Directfet Power Mosfet - International Rectifier

The IRF6629PBF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6629PBF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC Converters that power the latest generation of processors operating at higher frequencies. The IRF6629PBF has been optimized for parameters that are critical in synchronous buck including Rds(on), Gate charge and Cdv/dt-induced turn on immunity. The IRF6629PBF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. By International Rectifier Corp.
IRF6629PBF 's PackagesIRF6629PBF 's pdf datasheet

IRF6629PBF Pinout, Pinouts
IRF6629PBF pinout,Pin out
This is one package pinout of IRF6629PBF,If you need more pinouts please download IRF6629PBF's pdf datasheet.

IRF6629PBF circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

IRF6629PBF Pb-Free IRF6629PBF Cross Reference IRF6629PBF Schematic IRF6629PBF Distributor
IRF6629PBF Application Notes IRF6629PBF RoHS IRF6629PBF Circuits IRF6629PBF footprint