A 100V Single N-Channel HEXFET Power MOSFET In A DirectFET SJ Package�rated At 25 Amperes Optimized With Low On Resistance For Applications Such As Active OR�ing. Shipped In Tape And Reel Only. Part Is Not Available In Bulk, TR Is Implied In Par

The IRF6645 combines the latest HEXFET, Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC Converters By International Rectifier Corp.
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IRF6645 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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