DirectFET Power MOSFET

The IRF6668PBF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PBF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(10%) or 36V-60V ETSI input voltage range systems. The IRF6668PBF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC Converters By International Rectifier Corp.
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IRF6668PBF Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IRF6668PBF circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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