DirectFET Power MOSFET

The IRF6678PBF combines the latest HEXFET Power MOSFET IRF6678PBF IRF6678TRPbF Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678PBF balances industry leading on-state resistance while minimizing Gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert- ers that power high current loads such as the latest generation of Microprocessors The IRF6678PBF has been optimized for parameters that are critical in synchronous buck converters SyncFET sockets. By International Rectifier Corp.
IRF6678PBF 's PackagesIRF6678PBF 's pdf datasheet

IRF6678PBF Pinout, Pinouts
IRF6678PBF pinout,Pin out
This is one package pinout of IRF6678PBF,If you need more pinouts please download IRF6678PBF's pdf datasheet.

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