IRF6785MTRPbF

The IRF6785MPbF device utilizes DirectFET packaging technology. DirectFET packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI TM performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The TM DirectFET package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D Audio Amplifier applications. By International Rectifier Corp.
IRF6785M 's PackagesIRF6785M 's pdf datasheet
IRF6785MTR1PBF
IRF6785MTRPBF




IRF6785M Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IRF6785M circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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