2.0a, 400v, 3.600 Ohm, N-channel Power Mosfet CorporationThis N-Channel enhancement mode silicon Gate power eld
effect Transistor IRF710 is an advanced Power MOSFET designed,
tested, and guaranteed to withstand a specied level of
energy in the breakdown avalanche mode of operation. All of
these Power MOSFETs are designed for applications such
as Switching Regulators switching converters, Motor Drivers
Relay Drivers and drivers for high power bipolar switching
Transistors requiring high speed and low Gate drive power.
They CAN be operated directly from integrated circuits. By Intersil Corporation
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| IRF710 Pb-Free | IRF710 Cross Reference | IRF710 Schematic | IRF710 Distributor |
| IRF710 Application Notes | IRF710 RoHS | IRF710 Circuits | IRF710 footprint |
