Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Surface Mount (IRF9Z24S) Low-profile through-hole IRF9Z24L By International Rectifier Corp.
IRF9Z24L 's PackagesIRF9Z24L 's pdf datasheet
IRF9Z24S




IRF9Z24L Pinout, Pinouts
IRF9Z24L pinout,Pin out
This is one package pinout of IRF9Z24L,If you need more pinouts please download IRF9Z24L's pdf datasheet.

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